Skip to main content
King Abdullah University of Science and Technology
Statistics
STAT
Statistics
  • Study
    • Prospective Students
    • Current Students
  • Research
    • Research Areas
    • Research Groups
  • People
    • All People
    • Faculty
    • Affiliate Faculty
    • Instructional Faculty
    • Research Scientists
    • Research Staff
    • Postdoctoral Fellows
    • Administrative Staff
    • Alumni
    • Students
  • News
  • Events
  • History
  • Al-Kindi
    • Al-Kindi Distinguished Statistics Lectures
    • Al-Kindi Student Awards
  • About
  • CEMSE Division
  • Apply

memristor crossbar array

Compensated readout for high-density MOS-gated memristor crossbar array

1 min read · Sun, Apr 26 2015

News

Circuits memristor crossbar array

Mohamed Zidan, et al., "Compensated readout for high-density MOS-gated memristor crossbar array." IEEE Transactions on Nanotechnology 14 (1), 2014, 3. Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor

Statistics (STAT)

Footer

  • A-Z Directory
    • All Content
    • Browse Related Sites
  • Site Management
    • Log in

© 2025 King Abdullah University of Science and Technology. All rights reserved. Privacy Notice